Datasheet Summary
MITSUBISHI RF POWER MOS FET
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
Features
- High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
- High efficiency:55% typ.
- Source case type seramic package (connected internally to source)
2.0 3.50 t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE
MARKING
INDEX MARK TYPE No. LOT...