Datasheet4U Logo Datasheet4U.com

2SK2975 - RF POWER MOS FET

Description

2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

  • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm.
  • High efficiency:55% typ.
  • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX.

📥 Download Datasheet

Datasheet preview – 2SK2975

Datasheet Details

Part number 2SK2975
Manufacturer Mitsubishi Electric Semiconductor
File Size 29.51 KB
Description RF POWER MOS FET
Datasheet download datasheet 2SK2975 Datasheet
Additional preview pages of the 2SK2975 datasheet.

📁 Similar Datasheet

  • 2SK2972 - N-Channel MOSFET (VBsemi)
  • 2SK2972 - N-Channel MOSFET (Toshiba)
  • 2SK2976 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK2977LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2978 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK2978 - Silicon N-Channel MOSFET (Renesas)
  • 2SK2900-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
Other Datasheets by Mitsubishi Electric Semiconductor

Full PDF Text Transcription

Click to expand full text
MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No.
Published: |