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2SK2978 - Silicon N-Channel MOSFET

Features

  • Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A).
  • Low drive current.
  • High speed switching.
  • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I D.

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Datasheet Details

Part number 2SK2978
Manufacturer Hitachi Semiconductor
File Size 45.95 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1 150 –55 to +150 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.
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