Datasheet4U Logo Datasheet4U.com

2SK2978 Datasheet Silicon N-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview

2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd.

Key Features

  • Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A).
  • Low drive current.
  • High speed switching.
  • 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I D.