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CM20TF-12H - IGBT Module

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM20TF-12H

Datasheet Details

Part number CM20TF-12H
Manufacturer Mitsubishi Electric Semiconductor
File Size 50.75 KB
Description IGBT Module
Datasheet download datasheet CM20TF-12H Datasheet
Additional preview pages of the CM20TF-12H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM20TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B L GuP SuP P K GvP SvP K GwP SwP M T - DIA. (2 TYP.) D H N U V W J E GuN SuN GvN SvN GwN SwN Q S C TAB #110, t = 0.5 S Q S P TAB #250, t = 0.8 G N F R P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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