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CM20TF-12H - IGBT Module

Datasheet Summary

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.

Features

  • Low Drive Power.
  • Low VCE(sat).
  • Discrete Super-Fast Recovery (70ns) Free-Wheel Diode.
  • High Frequency Operation (20-25kHz).
  • Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM20TF-12H

Datasheet Details

Part number CM20TF-12H
Manufacturer Powerex Power Semiconductors
File Size 61.52 KB
Description IGBT Module
Datasheet download datasheet CM20TF-12H Datasheet
Additional preview pages of the CM20TF-12H datasheet.

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Full PDF Text Transcription

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CM20TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 20 Amperes/600 Volts A B L GuP SuP P K GvP SvP K GwP SwP M T - DIA. (2 TYP.) D H N U V W J E GuN SuN GvN SvN GwN SwN Q S C .110 TAB S Q S P .250 TAB G N F R P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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