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MGFS36E2325 - 2.3-2.5GHz HBT HYBRID IC

General Description

MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE.

Key Features

  • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 36E 2325 (Lot No. ) 10 9 8 7 6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change without notice. 2.3-2.5GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES • • • • • • • • • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 36E 2325 (Lot No.) 10 9 8 7 6 APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm (X-ray Top View) FUNCTIONAL BLOCK DIAGRAM Vc1 1000pF www.DataSheet.