Datasheet4U Logo Datasheet4U.com

MGFS38E2325-01 - 2.3 - 2.5GHz HBT MMIC MODULE

General Description

MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE.

Key Features

  • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MGFS36E2527 HBT HYBRID IC Mitsubishi Electric
MGFS1R5 DC-DC Converters COSEL
MGFS45V2527A power GaAs FET Mitsubishi Electric
MGFS52B2122 BAND 100W GsAs FET Mitsubishi Electric
MGFS52BN2122A power GaAs FET Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE
MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE
MGFS36E2325 2.3-2.5GHz HBT HYBRID IC
MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC
MGF1941AL Micro-X type plastic package

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Mitsubishi Semiconductors MGFS38E2325-01 Specifications are subject to change without notice. 2.3 - 2.5GHz HBT MMIC MODULE Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES • • • • • • • • InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 36dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package 4.0 10 9 8 7 6 APPLICATIONS IEEE802.16-2004 IEEE802.16e-2005 GND 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref Vcont X-ray Top View FUNCTIONAL BLOCK DIAGRAM www.DataSheet.net/ Gain control Pin Vcont (0V/3.