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PS21962-S - Intelligent Power Module

Key Features

  • net/ [B] Under-Voltage Protection (Lower-arm, UVD) b1. Control supply voltage rises : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO output (tFO ≥ 2.

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Full PDF Text Transcription for PS21962-S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PS21962-S. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Dual-In-Line <Dual-In-Line Package Package Intelligent Intelligent Power Power Module> Module> PS21962-S PS21962-S TRAN...

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igent Intelligent Power Power Module> Module> PS21962-S PS21962-S TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21962-S INTEGRATED POWER FUNCTIONS 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). Fault signaling : Corresponding