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PRE
HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
CM1200HC-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack q AISiC base plate.
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
C
G E
124 ±0.
CM1200HC-66H Datasheet
