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CM1800HC-34N - IGBT

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N q IC ................................................................ 1800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 57±0.25 57±0.25 4 - M8 NUTS 4(C) C 2(C) 4 2 124±0.25 140±0.5 20±0.1 40±0.2 G 3 1 E 3(E) 1(E) C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.65±0.2 48.8±0.2 10.35±0.2 6 - φ 7 MOUNTING HOLES 61.5±0.