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M54583FP - 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY

Download the M54583FP datasheet PDF. This datasheet also covers the M54583P variant, as both devices belong to the same 8 unit 400ma darlington transistor array family and are provided as variant models within a single manufacturer datasheet.

General Description

M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta =.
  • 20 to +75 °C) IN7→ 7 IN8→ 8 GND 9 Outline 18P4G M54583FP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M54583P_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com POWEREX MITSUBISHI SEMICONDUCTOR M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY PIN CONFIGURATION (TOP VIEW) DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.