M54587P Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC IN1 IN2 IN3 IN4 INPUT IN5 6 7 8 9 10 15 14 13 12 11 1 2 3 4 5 20 19 18 17 16 MON O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection Features q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500mA) q “L” active level input q With input diode q With...