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M63812P - (M63812xx) 7-UNIT 300mA TRANSISTOR ARRAY

Download the M63812P datasheet PDF. This datasheet also covers the M63812FP variant, as both devices belong to the same (m63812xx) 7-unit 300ma transistor array family and are provided as variant models within a single manufacturer datasheet.

General Description

M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta=.
  • 40 to +85 °C) GND →COM COMMOM Package type 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M63812FP_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.