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M63830FP - (M63830xP) 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY

Download the M63830FP datasheet PDF. This datasheet also covers the M63830P variant, as both devices belong to the same (m63830xp) 4-unit 1.5a darlington transistor-array family and are provided as variant models within a single manufacturer datasheet.

General Description

The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs.

Key Features

  • G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 1.5A) G 3V micro computer series compatible input G With clamping diodes G With input diode G Wide operating temperature range (Ta =.
  • 40 to +85° C) INPUT1 IN1 GND 5 12 11 10 9 INPUT2 IN2 OUTPUT2 O2 VCC 6 7 8 IN3 INPUT3 O3 OUTPUT3 COM COMMON 16P4(P) Package type 16P2N-A(FP).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M63830P_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION DESCRIPTION The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs. VCC OUTPUT1 O1 1 2 3 4 16 15 14 13 COM COMMON O4 OUTPUT4 IN4 INPUT4 GND FEATURES G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 1.