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M63830P - (M63830xP) 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY

General Description

The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs.

Key Features

  • G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 1.5A) G 3V micro computer series compatible input G With clamping diodes G With input diode G Wide operating temperature range (Ta =.
  • 40 to +85° C) INPUT1 IN1 GND 5 12 11 10 9 INPUT2 IN2 OUTPUT2 O2 VCC 6 7 8 IN3 INPUT3 O3 OUTPUT3 COM COMMON 16P4(P) Package type 16P2N-A(FP).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som MITSUBISHI SEMICONDUCTOR P MIN RELI ARY M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE PIN CONFIGURATION DESCRIPTION The M63830P/FP 4-channel sinkdriver, consists of 4 PNP and 8 NPN transistors connected to from four high current gain driver pairs. VCC OUTPUT1 O1 1 2 3 4 16 15 14 13 COM COMMON O4 OUTPUT4 IN4 INPUT4 GND FEATURES G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 1.