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M63850FP - (M63850xP) 4-UNIT 1.5A DMOS ARRAY

Download the M63850FP datasheet PDF. This datasheet also covers the M63850P variant, as both devices belong to the same (m63850xp) 4-unit 1.5a dmos array family and are provided as variant models within a single manufacturer datasheet.

General Description

The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.

Key Features

  • 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.25A) Wide operating temperature range (Ta =.
  • 40 to +85°C) IN2→ 6 NC 7 O2← 8 11 ←IN3 10 →O3 9 COM NC : No connection Package type 16P4(P) 16P2N(FP).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M63850P_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE PIN CONFIGURATION COM 1 O1← 2 IN1→ 3 GND 16 →O4 15 ←IN4 14 VDD 13 12 DESCRIPTION The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.    4 5  GND   FEATURES 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.