Datasheet4U Logo Datasheet4U.com

M63850P - (M63850xP) 4-UNIT 1.5A DMOS ARRAY

General Description

The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.

Key Features

  • 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.25A) Wide operating temperature range (Ta =.
  • 40 to +85°C) IN2→ 6 NC 7 O2← 8 11 ←IN3 10 →O3 9 COM NC : No connection Package type 16P4(P) 16P2N(FP).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Mitsubishi
M63804FP (M63804xx) 7-Unit 300mA Transistor Array Powerex
M63804FP (M63804xx) 7-Unit 300mA Transistor Array Mitsubishi Electric Corporation
M63804GP (M63804xx) 7-Unit 300mA Transistor Array Powerex
M63804GP (M63804xx) 7-Unit 300mA Transistor Array Mitsubishi Electric Corporation

Other Datasheets by Mitsubishi Electric

Part Number Description
M63850FP (M63850xP) 4-UNIT 1.5A DMOS ARRAY
M63802FP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY
M63802GP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY
M63802KP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY
M63802P (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som ARY M63850P/FP 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE PIN CONFIGURATION COM 1 O1← 2 IN1→ 3 GND 16 →O4 15 ←IN4 14 VDD 13 12 DESCRIPTION The M63850P/FP is a inverter input power DMOS transistor array that consists of 4 independent output N-channel DMOS transistors.    4 5  GND   FEATURES 4 circuits of N-channels DMOS High breakdown voltage (VDS ≥ 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72Ω, @ = 1.