MG800J2YS50A Datasheet | Mitsubishi Electric

.. MITSUBISHI IGBT Module High power switching applications Motor control applications - - - The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Equivalent Circuit TH1 TH2 C1 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2 2004-10-01 1/9 Package Dimensions Unit: mm Weight: 680 g (typ.) 2004-10-01 2/9 Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol ⎯ ⎯ Rating 600 ±20 800 800 2900 150 - 40~125 2500 (AC 1 min) 10 3 Unit V V A A W °C °C V N- m N- m Screw torque Electrical Characteristics (Ta = 25°C) Characteristics Gate Leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage VF IF = 800A, VGE = 0V Tj = 25°C Tj = 125°C Inductive load VCC = 300 V IC = 800 A VGE = ±15 V RG = 4.7 Ω (Note) Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 800 m A, VCE = 5 V IC = 800 A, VGE = 15 V Tj = 25°C Tj = 125°C Min ⎯ ⎯ 5.0 ⎯ ⎯ ⎯ 13 4.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1600 Typ. ⎯ ⎯ 6.5 2.4 2.6 93000 15 ⎯ 0.3 0.25 0.55 0.85 0.15 1.05 2.3 2.1 ⎯ ⎯ ⎯ ⎯ Max ±10 1 8.0 3.0 3.3 ⎯ 17 15 ⎯ ⎯ ⎯ ⎯ 0.30 ⎯ 3.0 ⎯ 0.5 0.043 C/W 0.056 ⎯ A V µs µs p F V Ω Unit µA m A V V VCE = 10 V, VGE = 0 V, f = 1 MHz ⎯ ⎯ Reverse recovery time trr IF = 800 A, VGE = - 10 V di/dt = 2000 A/µs Transistor stage Thermal resistance RTC Operating current Rth (j-c) Diode stage Irtc Tj = 25°C 2004-10-01 3/9 Thermistor Characteristics Zero power resistance B value Isolation voltage Symbol R25 R25/85 Tc = 25°C Tc = 25°C/Tc = 85°C Tc = 25°C Test Condition Min ⎯ ⎯ 2500...