MG800J2YS50A Datasheet | Toshiba

TOSHIBA IGBT Module Silicon N Channel IGBT High power switching applications Motor control applications - - - The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Unit: mm Equivalent Circuit TH1 TH2 Ｃ1 G1 Fo1 E1 E1/C2 JEDEC G2 Fo2 E2 E2 ― ― 2-126A1A JEITA TOSHIBA Weight: 680 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol ¾ ¾ Rating 600 ±20 800 800 2900 150 -40~125 2500 (AC 1 min) 10 3 Unit V V A A W °C °C V N･m N･m 2002-10-31 Electrical Characteristics (Ta = 25°C) Characteristics Gate Leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr Rth (j-c) Irtc IF = 800A, VGE = 0V Tj = 25°C Tj = 125°C Inductive load VCC = 300 V IC = 800 A VGE = ±15 V RG = 4.7 W Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 800 m A, VCE = 5 V IC = 800 A, VGE = 15 V Tj = 25°C Tj = 125°C Min ¾ ¾ ¾ ¾ ¾ ¾ 13 4.7 ¾ ¾ ¾ ¾ (Note) ¾ ¾ ¾ ¾ ¾ ¾ ¾ 1600 Typ. ¾ ¾ 6.5 2.4 2.6 93000 15 ¾ 0.3 0.25 0.55 0.85 0.15 1.05 2.3 2.1 ¾ ¾ ¾ ¾ Max ±10 1 ¾ 3.0 3.3 ¾ 17 15 ¾ ¾ ¾ ¾ 0.30 ¾ 3.0 ¾ 0.5 0.043 0.056 ¾ V ms C/W A ms Unit m A m A V V p F V W VCE = 10 V, VGE = 0 V, f = 1 MHz ¾ ¾ IF = 800 A, VGE = -10 V di/dt = 2000 A/ms Transistor stage Diode stage Tj = 25°C Thermistor Characteristics Zero power resistance B value Isolation voltage Symbol R25 R25/85 Tc = 25°C Tc = 25°C/Tc = 85°C Tc = 25°C Test Condition Min ¾ ¾ 2500 Typ. 100 4390 ¾ Max ¾ ¾ ¾ Unit k W K...