MG800J2YS50A datasheet by Toshiba.
| Part number | MG800J2YS50A |
|---|---|
| Datasheet | MG800J2YS50A_ToshibaSemiconductor.pdf |
| File Size | 211.07 KB |
| Manufacturer | Toshiba |
| Description | N-Channel IGBT |
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MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications · · · The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH) Unit: 680 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction...
View MG800J2YS50A datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MG800J2YS50A | High power switching applications Motor control applications | Mitsubishi Electric |
| Part Number | Description |
|---|---|
| MG800J1US51 | N-Channel IGBT |
| MG8G4GM1 | (MG8G6EM1 / MG8G4gM1) Transistor |
| MG8G6EM1 | (MG8G6EM1 / MG8G4gM1) Transistor |
| MG8Q6ES42 | N-Channel IGBT |
