RA13H1317M Datasheet PDF - Mitsubishi Electric MOBILE RADIO Specs

RA13H1317M - MOBILE RADIO

Datasheet Summary

Description

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 135-175 MHz www. DataSheet4U. com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case).
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent d.

Datasheet Details

Part number	RA13H1317M
Manufacturer	Mitsubishi Electric
File Size	96.43 KB
Description	MOBILE RADIO
Datasheet	RA13H1317M Datasheet
Additional preview pages of the RA13H1317M datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).

Published: Jul 11, 2007 |