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RA13H3340M - MOBILE RADIO

Datasheet Summary

Description

The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
  • Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 330-400MHz www. DataSheet4U. com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case).
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V.
  • Module Size: 66 x 21 x 9.88 mm.
  • Linear operation is possible by setting the quiescent dr.

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Datasheet Details

Part number RA13H3340M
Manufacturer Mitsubishi Electric
File Size 94.46 KB
Description MOBILE RADIO
Datasheet download datasheet RA13H3340M Datasheet
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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).
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