RD30HVF1 Datasheet | Mitsubishi Electric

DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7d B @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm Ro HS PLIANT RD30HVF1-101 is a Ro HS pliant products. Ro HS pliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1m A f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(Pin Control) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.3 30 55 LIMITS TYP MAX. 130 1 1.8 2.3 35 60 No destroy UNIT u A u A V W % - Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Ro HS pliance, Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS...