RD30HVF1 Overview
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency:.
RD30HVF1 datasheet by Mitsubishi Electric.
| Part number | RD30HVF1 |
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| Datasheet | RD30HVF1_MitsubishiElectric.pdf |
| File Size | 398.19 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor |
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RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency:.
View all Mitsubishi Electric datasheets
| Part Number | Description |
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