RD30HVF1 Description
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency:.
| Part number | RD30HVF1 |
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| Download | RD30HVF1 Datasheet (PDF) |
| File Size | 398.19 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor |
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RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency:.