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RD30HVF1 - Silicon MOSFET Power Transistor

Datasheet Summary

Description

RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.

Features

  • 1.

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Datasheet Details

Part number RD30HVF1
Manufacturer Mitsubishi Electric
File Size 398.19 KB
Description Silicon MOSFET Power Transistor
Datasheet download datasheet RD30HVF1 Datasheet
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    www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
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