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M2V56S40ATP

Manufacturer: Mitsubishi Electric
M2V56S40ATP datasheet preview

Datasheet Details

Part number M2V56S40ATP
Datasheet M2V56S40ATP_MitsubishiElectricSemiconductor.pdf
File Size 619.17 KB
Manufacturer Mitsubishi Electric
Description 256M Synchronous DRAM
M2V56S40ATP page 2 M2V56S40ATP page 3

M2V56S40ATP Overview

All inputs and outputs are referenced to the rising edge of CLK.

M2V56S40ATP Key Features

  • Single 3.3v±0.3V power supply
  • Max. Clock frequency -5:PC166<3-3-3> / -6:PC133<3-3-3> / -7:PC100<2-2-2>
  • Fully Synchronous operation referenced to clock rising edge
  • Single Data Rate
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/full page (programmable)
  • Burst type- sequential / interleave (programmable)
  • Random column access
  • Auto precharge / All bank precharge controlled by A10
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