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M2V56S40TP

Manufacturer: Mitsubishi Electric
M2V56S40TP datasheet preview

Datasheet Details

Part number M2V56S40TP
Datasheet M2V56S40TP_MitsubishiElectricSemiconductor.pdf
File Size 244.10 KB
Manufacturer Mitsubishi Electric
Description 256M Synchronous DRAM
M2V56S40TP page 2 M2V56S40TP page 3

M2V56S40TP Overview

All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in puter systems.

M2V56S40TP Key Features

  • Single 3.3v±0.3V power supply
  • Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)
  • Fully Synchronous operation referenced to clock rising edge
  • Single Data Rate
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/full page (programmable)
  • Burst type- sequential / interleave (programmable)
  • Random column access
  • Auto precharge / All bank precharge controlled by A10
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