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M2V64S40TP

Manufacturer: Mitsubishi Electric
M2V64S40TP datasheet preview

Datasheet Details

Part number M2V64S40TP
Datasheet M2V64S40TP_MitsubishiElectricSemiconductor.pdf
File Size 655.47 KB
Manufacturer Mitsubishi Electric
Description 64M bit Synchronous DRAM
M2V64S40TP page 2 M2V64S40TP page 3

M2V64S40TP Overview

All inputs and outputs are referenced to the rising edge of CLK. M2V64S20BTP,M2V64S30BTP,M2V64S40BTP achieves very high speed data rates up to 133MHz, and is suitable for main memory or graphic memory in puter systems.

M2V64S40TP Key Features

  • Single 3.3V ±0.3V power supply
  • Max. Clock frequency -6 : 133MHz [PC133<3-3-3> ]
  • Fully synchronous operation referenced to clock rising edge
  • 4-bank operation controlled by BA0,BA1(Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/FP (programmable)
  • Burst type- Sequential and interleave burst (programmable)
  • Random column access
  • Auto precharge / All bank precharge controlled by A10
  • Auto and self refresh
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