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M54566DP - 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

General Description

darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BVCEO> 50V).
  • High-current driving (Ic(max) = 400mA).
  • Active L-level input PIN.

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MITSUBISHI SEMICONDUCTORS M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ●High breakdown voltage (BVCEO> 50V) ●High-current driving (Ic(max) = 400mA) ●Active L-level input PIN CONFIGURATION INPUT IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9 VCC OUTPUT APPLICATIONS Interfaces between microcomputers and high-voltage, high-current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces.