M5K4164ANP-20 Overview
This is a family of 65536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the uSe of dynamic...
M5K4164ANP-20 Key Features
- Single 5V±20/ supply
- Low standby power dissipation: 22.0 mW (max)