M5M417400CJ Overview
This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process bined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs....
M5M417400CJ Key Features
- Standard 26 pin SOJ, 26 pin TSOP
- Single 5V ± 10% supply
- Low stand-by power dissipation 5.5mW(Max)
- CMOS Input level 2.2mW (Max)
- CMOS Input level
- Low operating power dissipation M5M417400Cxx-5,-5S
- 800.0mW (Max) M5M417400Cxx-6,-6S
- 660.0mW (Max) M5M417400Cxx-7,-7S
- 580.0mW (Max)
- Self refresh capability