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M5M4256P-12 - 256K-Bit DRAM

General Description

This is a fami Iy of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Key Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power diSSipation (typ) (mW) M5M4256P-12 120 230 260 M5M4256P-15 1.

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📁 Similar Datasheet

Part Number Description Manufacturer
M5M4256AJ-10 Page Mode 262144-Bit DRAM Mitsubishi Electric Semiconductor
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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M4256P-15 256K-Bit DRAM
M5M4256P-20 256K-Bit DRAM
M5M4256L-12 256K-Bit DRAM
M5M4256L-15 256K-Bit DRAM
M5M4256L-20 256K-Bit DRAM

Full PDF Text Transcription (Reference)

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MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a fami Iy of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.