M5M4256P-20 Overview
This is a fami Iy of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process bined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and...