M5M4416P-12

M5M4416P-12 Description

This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic...