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M5M4416P-12 - 64K-Bit Dynamic Ram

General Description

This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Key Features

  • Performance ranges Type name M5M4416P-12 M5M4416P-15 Access time (max} (ns) 120 150 Cycle time (min) Insl 220 260 Power dissipation Itypi ImWI 175 150.
  • 16,384 x 4 Organization.

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Full PDF Text Transcription for M5M4416P-12 (Reference)

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MITSUBISHI LSls MSM4416P-12, -15 65 536-BIT (16 384-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high pe...

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amily of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 18-pin package configuration and an increase in system densities. The M5M4416P opera

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