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MITSUBISHI LSls
MSM4416P-12, -15
65 536-BIT (16 384-WORD BY 4-BIT) DYNAMIC RAM
DESCRIPTION
This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 18-pin package configuration and an increase in system densities. The M5M4416P operates on a 5V power supply using the on-chip substrate bias generator.
M5M4416P-12 Datasheet
