Download the M5M4416P-15 datasheet PDF.
This datasheet also covers the M5M4416P-12 variant, as both devices belong to the same 64k-bit dynamic ram family and are provided as variant models within a single manufacturer datasheet.
General Description
This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
Key Features
Performance ranges
Type name
M5M4416P-12 M5M4416P-15
Access time (max} (ns)
120
150
Cycle time (min) Insl
220
260
Power dissipation Itypi ImWI
175
150.
Full PDF Text Transcription for M5M4416P-15 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
M5M4416P-15. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI LSls MSM4416P-12, -15 65 536-BIT (16 384-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 16348-word by 4-bit dynamic RAMs, fabricated with the high pe...
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amily of 16348-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 18-pin package configuration and an increase in system densities. The M5M4416P opera
M5M4416P-15 Datasheet
