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M5M44265CJ - EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

Download the M5M44265CJ datasheet PDF. This datasheet also covers the M5M variant, as both devices belong to the same edo (hyper page mode) 4194304-bit (262144-word by 16-bit) dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

Key Features

  • Type name M5M44265CXX-5,-5S M5M44265CXX-6,-6S M5M44265CXX-7,-7S RAS CAS access access time time (max. ns) (max. ns) OE Address access access time time (max. ns) (max. ns) Power Cycle dissipatime tion (min. ns) (typ. mW) DQ8 10 NC 11 NC 12 W 13 RAS 14 NC 15 A0 16 A1 17 A2 18 A3 19 50 60 70 13 15 20 25 30 35 13 15 20 90 110 130 625 550 475 XX=J,TP Standard 40pin SOJ, 44 pin TSOP (II) Single 5V±10% supply Low stand-by power dissipation CMOS Input level 5.5mW (Max) CMOS Input level 550µW (Max).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M-44265.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M5M44265CJ,TP-5,-6,-7, M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD 16-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.