M5M4464P-12 Overview
This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic...
M5M4464P-12 Key Features
- Performance ranges
- 65536 x 4 Organization