Datasheet4U Logo Datasheet4U.com

M5M4V4265CJ-5S - EDO 4M-Bit DRAM

Download the M5M4V4265CJ-5S datasheet PDF. This datasheet also covers the M5M4V4265CJ-5 variant, as both devices belong to the same edo 4m-bit dram family and are provided as variant models within a single manufacturer datasheet.

General Description

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M4V4265CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M5M417800AJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417800CJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417800DJ Fast Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417805CJ Hyper Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417805DJ EDO Mode 16M-Bit DRAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M4V4265CJ-5 EDO 4M-Bit DRAM
M5M4V4265CJ-6 EDO 4M-Bit DRAM
M5M4V4265CJ-6S EDO 4M-Bit DRAM
M5M4V4265CJ-7 EDO 4M-Bit DRAM
M5M4V4265CJ-7S EDO 4M-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITMSUITBSIUSHBISLHSIIsLSIs M5M4V4265CJM,5TMP4V-452,6-56C,J-,7TP,--55,-S6,,--76,-5SS,,--67SS,-7S EDOED(HOY(PHEYRPPEARGPEA)GMEO) DMEO4D1E9431094-3B0I4T-B(2IT62(124642-1W44O-WRDORBDY 1B6Y-B1I6T-)BDITY)NDAYMNIACMRICAMRAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.