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M5M4V4405CTP-6S Key Features

  • 1.8mW(Max)- CMOS lnput level
  • 180µW(Max) Low operating power dissipation M5M4V4405Cxx-6, -6S
  • 288.0mW (Max) M5M4V4405Cxx-7, -7S
  • 252.0mW (Max) Self refresh capabiility- Self refresh current
  • 100µA(max) Extended refresh capability- Extended refresh current

Related Mitsubishi Electric Datasheets

Part Number Description
M5M4V4405CTP-6 EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7 EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7S EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ EDO (HYPER PAGE MODE) 4M-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ-6 EDO (HYPER PAGE MODE) 4M-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM

M5M4V4405CTP-6S Description

This is a family of 1048576-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power dissipation , and low costs are essential. The use of quadruple-layer polysilicon process bined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs....