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99 Jul Jul ,1997 ,1997
MITSUBISHI MITSUBISHI LSIs LSIs
M5M51016BTP,RT-70L,-10L-I, M5M51016BTP,RT-70L,-10L-I, -70LL,-10LL-I -70LL,-10LL-I
1048576-BIT(65536-WORD 1048576-BIT(65536-WORDBY BY16-BIT)CMOS 16-BIT)CMOSSTATIC STATICRAM RAM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD).