Datasheet Details
| Part number | M5M51016BTP-10VL-I |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 76.21 KB |
| Description | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| Datasheet |
 M5M51016BTP-10VL-I Datasheet
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General Description
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology.
The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
Key Features
- Power supply current Type name Access time (max) Active (max) stand-by (max) 120µA (VCC = 3.6V) M5M51016BTP,RT-10VL 100ns 12mA (1MHz) M5M51016BTP,RT-10VLL 100ns 24µA (VCC = 3.6V) 0.3µA (VCC = 3.0V, typ) Single +3.3V power supply Low stand-by current 0.3µA (typ. ) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents data contention in the I/O bus Common data I.