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M5M5V416BRT - 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

General Description

The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm CMOS technology .

Key Features

  • Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty p. ) No clocks, No ref resh Data retention supply v oltage=2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.25µm CMOS.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M5V416BTP 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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revision-P04, ' 98.12.16 MITSUBISHI LSIs M5M5V416BTP,RT DESCRIPTION The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm CMOS technology . The M5M5V416B is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small outline package. M5M5V416BTP (normal lead bend ty pe package) , M5M5V416BRT (rev erse lead bend ty pe package) , both ty pes are v ery easy t o design a printed circuit board. From the point of operating temperature, the f amily is div ided into three v ersions; "Standard", "W-v ersion", and "I-v ersion".