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M5M5V416WG-70LI - 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

General Description

The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm CMOS technology .

Key Features

  • Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty p. ) No clocks, No ref resh Data retention supply v oltage =2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.25µm CMOS Package: 48pin 7mm x 8.5mm CSP Stand-by c urrent Icc (PD), Vcc=3.0V Activ e current Ratings (max. ) Icc1 25°C 40°C 70°C 85°C (3.0V, ty p. ) ---.

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Full PDF Text Transcription (Reference)

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revision-W03, ' 98.12.16 MITSUBISHI LSIs M5M5V416BWG DESCRIPTION The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm CMOS technology . The M5M5V416B is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416BWG is packaged in a CSP (chip scale package), with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and ball pitch of 0.75mm. It giv es the best solution f or a compaction of mounting area as well as f lexibility of wiring pattern of printed circuit boards. From the point of operating temperature, the f amily is div ided into three v ersions; "Standard", "W-v ersion", and "I-v ersion".