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M5M5Y416CWG-70HI - 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

General Description

The M5M5Y416C is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology .

Key Features

  • Single 1.65~2.3V power supply Small stand-by current: 0.2µA (2.0V, ty p. ) No clocks, No ref resh Data retention supply v oltage =1.3V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.18µm CMOS Package: 48ball 7.0mm x 8.5mm CSP Power Supply Access time max. 70ns Activ e current Icc1 25°C 40°C 25°C 40°C 70°C 85°C (2.3V, max) Stand-by c.

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Part Number Description
M5M5Y416CWG-85HI 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2001.05.08 Ver. 3.0 MITSUBISHI LSIs Preliminary M5M5Y416CWG -70HI, -85HI Notice: This is not a final specification. Some parametric limits are subject to change. 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Those are summarized in the part name table below. DESCRIPTION The M5M5Y416C is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology . The M5M5Y416C is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5Y416CWG is packaged in a CSP (chip scale package), with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm.