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M66280FP Datasheet 5120 X 8-bit Line Memory

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI M66280FP 5120 x 8-BIT LINE MEMORY.

General Description

The M66280FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 5120 words x 8 bits.

The M66280FP, performing reading and writing operations at different cycles independently and asynchronously, is optimal for buffer memory to be used between equipment of different data processing speeds.

PIN CONFIGURATION (TOP VIEW) Q0 DATA OUTPUT Q1 Q2 Q3 READ ENABLE REB INPUT READ RESET RRESB INPUT GND READ CLOCK INPUT RCK Q4 DATA OUTPUT 1 2 3 4 5 6 7 8 9 24 D0 23 D1 22 D2 21 D3 WRITE ENABLE INPUT WRITE RESET 19 WRESB INPUT 20 WEB 18 VCC 17 WCK 16 D4 15 D5 DATA INPUT 14 D6 13 D7 WRITE CLOCK INPUT DATA INPUT

Key Features

  • Memory configuration 5120 words x 8 bits (dynamic memory) High speed cycle 25 ns (Min. ) High speed access 18 ns (Max. ) Output hold 3 ns (Min. ) Reading and writing operations can be completely carried out independently and asynchronously.
  • Variable length delay bit.
  • Input/output TTL direct connection allowable.
  • Output 3 states M66280FP Q5 10 Q6 11 Q7 12.

More Datasheets from Mitsubishi Electric

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M66280FP Distributor