M68731H Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Strage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V m W W °C °C Note. Above parameters are guarateed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 150 7 50 Max 175 Unit MHz W % d Bc - VDD=7.2V, VGG=3.5V, Pin=50W ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50m W, PO=7W (VGG adjust), ZL=20:1 -20 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 14 13 @VDD=7.2V 12 VGG=3.5V Pin=50m W 11 PO 10 9 8 7 ηT 6 5 4 3 ρin 2 1 0 130 140 150 160 FREQUENCY f (MHz) 90 80 70 60 50 40 30 20 180 0.1 0.01 1 100 1 10 OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 @VDD=7.2V VGG=3.5V f=150MHz 10 PO ηT 100 INPUT POWER Pin (m W) OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 @VDD=7.2V VGG=3.5V f=175MHz 10 PO ηT 1 10 100 OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 ηT PO @f=150MHz VGG=3.5V Pin=50m W 100 90 80 70 60 50 40...