M68732 Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 520 6.5 35 Max 530 Unit MHz W % d Bc - VDD=7.2V, VGG=3.5V, Pin=50m W ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50m W, PO=6.5W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 VGG=3.5V, VDD=7.2V Pin=17d Bm 8 PO 6 50 6 60 60 8 70 10 VGG=3.5V VDD=7.2V Pin=17d Bm PO (f L) PO (f H) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100 ηT 4 ηT (f L) ηT (f H) 0 -5 0 5 10 15 2 ρin 0 20 490 500 510 520 530 540 550 560 FREQUENCY f (MHz) 0 20 INPUT POWER Pin (d Bm) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 10 VDD=7.2V Pin=17d Bm f L=520MHz f H=530MHz 100 14 10 8 6 PO (f L) PO (f H) ηT (f L) ηT (f H) 60 6 40 4 20 2...