M68732H Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 450 7 43 Max 470 Unit MHz W % d Bc - VDD=7.2V, VGG=3.5V, Pin=50m W ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50m W, PO=7W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 0 440 450 ρin 460 470 ηT VGG=3.5V, VDD=7.2V, Pin=17d Bm PO 70 65 60 55 50 45 40 35 30 25 20 480 4 3 2 1 0 -10 -5 0 5 ηT;450MHz ηT;470MHz 40 30 20 10 0 20 9 8 7 6 5 VGG=3.5V, VDD=7.2V PO;450MHz PO;470MHz OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 90 80 70 60 50 FREQUENCY f (MHz) INPUT POWER Pin (d Bm) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 GATE VOLTAGE VGG (V) ηT;450MHz ηT;470MHz VDD=7.2V, Pin=17d Bm PO;450MHz...