Click to expand full text
MITSUBISHI RF POWER MODULE
M68739M
SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2 26.6±0.2 21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.5±0.1
1 5 1 2 3 4
4 5
φ 0.45
6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤2.5V, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω Ratings 16 3 30 10 -30 to +100 -40 to +110 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
M68739M Datasheet
