M68739M Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2-R1.5±0.1 1 5 1 2 3 4 4 5 φ 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤2.5V, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω Ratings 16 3 30 10 -30 to +100 -40 to +110 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 155 7 50 Max 168 Unit MHz W % d Bc - VDD=9.6V, VGG=2.5V, Pin=20m W ZG=50Ω, VDD=4.8-13.2V, Load VSWR <4:1 VDD=13.2V, Pin=20m W, PO=7W (VGG Adjust), ZL=20:1 -20 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov....