M68761 Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO OUTLINE DRAWING 42 37 30 2-R1.5 Dimensions in mm BLOCK DIAGRAM 5 6 9.6 14.7 19.7 27.4 32.4 PIN: 1 Pin : RF INPUT 2 VDD1 : 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2 : 2nd DRAIN BIAS SUPPLY 5 PO : RF OUTPUT 6 GND: FIN H15 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 4 10 10 -30 to +100 -40 to +100 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO 2f O ρin ηT Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance VDD=12.5V, VGG=3.5V, Pin=1m W, ZG=ZL=50Ω PO=6W(VGG=Adjust), VDD=12.5V, Pin=1m W(CW), ZG=ZL=50Ω ZG=ZL=50Ω, VDD=10-16V, Load VSWR <4:1 VDD=15.2V, Pin=1m W, PO=6W (VGG Adjust), ZL=20:1 Parameter Test conditions Limits Min 820 6 -30 4 33 No parasitic oscillation No degradation or destroy Max 851 Unit MHz W d Bc % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 VDD1=12.5V 4 VDD2=12.5V VGG=3.4V 3 Pin=1m W 2 ZG=ZL=50 Ω 1 0 0 800 810 820 830 840 850 860 870 FREQUENCY f (MHz) 0.1 0.01 0.10 PO 10.0 30 ηT 40 PO 10.0 50 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT 20 1.0 ρin 10 f=820MHz VDD1=12.5V VDD2=12.5V VGG=3.5V ZG=ZL=50Ω 1.00 1.0 0.1 10.00 INPUT POWER Pin (m W) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT OUTPUT POWER, TOTAL EFFICIENCY VS....