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MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
OUTLINE DRAWING
42 37 30 2-R1.5
Dimensions in mm
BLOCK DIAGRAM
2
3
4
1
5 6
9.6 14.7 19.7 27.4 32.4
PIN: 1 Pin : RF INPUT 2 VDD1 : 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2 : 2nd DRAIN BIAS SUPPLY 5 PO : RF OUTPUT 6 GND: FIN
H15
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 4 10 10 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
M68761 Datasheet
