M68762SL
M68762SL is Silicon Bipolar Power Amplifier manufactured by Mitsubishi Electric.
MITSUBISHI RF POWER MODULE
Silicon Bipolar Power Amplifier, 350-400MHz 30W FM Mobile
OUTLINE DRAWING
66+/-0.5 3+/-0.3 7.25+/-0.8 60+/-0.5 51.5+/-0.5
Dimensions in mm
BLOCK DIAGRAM
2 3 4
21+/-0.5
1.5+0.8/-0
21.5+/-0.5
22.5+/-0.5
4+/-0.3
5 6
2-R2+/-0.5 1
10+/-0.5
2 phi 0.45 +/-0.2
12+/-1 16.5+/-1
7.5+0.8/-0
14+/-1
33.0+/-1 43.5+/-1 55.5+/-1
PIN: 1 Pin : RF INPUT 2 Vcc1: 1st. DC SUPPLY 3 Vcc2: 2nd. DC SUPPLY 4 Vcc3: 3rd. DC SUPPLY 5 Po : RF OUTPUT 6 GND : FIN
(9.8)
H3
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER Vcc SUPPLY VOLTAGE Icc TOTAL CURRENT Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS ZG=ZL=50 ohms ZG=ZL=50 ohms Vcc1<12.5V, ZG=ZL=50 ohms Vcc1<12.5V, ZG=ZL=50 ohms ZG=ZL=50 ohms RATINGS 17 10 600 40 -30 to +110 -40 to +110 UNIT V A m W W deg. C deg. C
ELECTRICAL CHARACTERISTICS (Tc=25deg.C UNLESS OTHERWISE NOTED)
SYMBOL f Po Efficiency 2fo 3fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC 3rd HARMONIC INPUT VSWR STABILITY (note 1) TEST CONDITIONS LIMITS MIN MAX 350 400 30 40 -30 -30 3.5 No parasitic oscillation No degradation or destroy UNIT MHz W % d Bc d Bc
- 3.1+/-0.4
VCC=12.5V, Pin=0.3W, ZG=ZL=50 ohms
ZG=50 ohms, VCC1=5-12.5V, Vcc2=Vcc3=10-16V (Vcc1<Vcc2=Vcc3) Po<40W (Pin control), Load VSWR < 3.0:1(all phase) VSWRT LOAD VSWR TOLERANCE VCC=15.2V,Po=30W(Pin control) ZG=50 ohms, LOAD VSWR=20:1 NOTE: Above parameters, ratings, limits and conditions are subject to change. NOTE1: Stability is tested by sampling test (10pcs/LOT)
2.3+/-0.3
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