M68772
M68772 is Silicon MOS FET Power Amplifier manufactured by Mitsubishi Electric.
ATTENTION
OBSERVE PRECAUTIONS FOR HANDLING
ELETROSTATIC SENSITIVE DEVICES
MITSUBISHI RF POWER MODULE
Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile
D i m e n s io n s i n m m
O U T L IN E D R A W IN G
B L O C K D IA G R A M
6 0 .5 + /-1 5 7 .5 + /-0 .5 5 0 .2 + /-1 + 0 .2 2 -R 1 .6 0
1 1 + /-0.5 1 4 + /-0.5
4 5
1 0 + /-1
φ
0 .4 5 + /-0 .2
8 .3 + /-1 2 1 .3 + /-1 4 3 .3 + /-1 5 1 .3 + /-1
P IN :
1 P in
: R F IN P U T
2 V G G : G A T E B IA S S U P P L Y 3 V D D : D R A IN B IA S S U P P L Y 4 PO
: RF OUTPUT
5 G N D : F IN
2 .3 + /-0 .3
3 .4 + 0 .8
-0.4
H11
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS VGG<5V,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms RATINGS 17 5.5 10 20 -30 to +100 -40 to +100 UNIT V V m W W deg. C deg. C
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED)
SYMBOL f Po Efficiency 2fo VSWR in Switching Time PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR tr, tf TEST CONDITIONS LIMITS MIN MAX 890 915 13 35 -30 4 2.0 No parasitic oscillation No degradation or destroy UNIT MHz W % d Bc micro sec
- VDD=12.5V, VGG=4V, Pin=2m W VDD=12.5V, Pin=2m W Po=13W (VGG adjust)
Po=13W(VGG adjust), VGG: ON/OFF Vdd=12.5V, Pin=2m W STABILITY ZG=50 ohms, VDD=10-16V, Pin=1-4m W, Po=0.1-20W (VGG Control), LOAD VSWR < 4:1 LOAD VSWR TOLERANCE VDD=15.2V,Pin=2m W,Po=13W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE...
