Mitsubishi M68772
Silicon MOS FET Power Amplifier
| Part No. | M68772 |
|---|---|
| Datasheet | M68772 Download |
| Manufacturer |  Mitsubishi |
| Description | Silicon MOS FET Power Amplifier |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Tc=25deg C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS VGG<5V,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms RATINGS 17 5.5 10 20 -30 to +100 -40 to +100 UNIT V V mW W deg. C deg. CELECTRICAL CHARACTERISTICS
(Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in Switching Time PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR tr, tf TEST CONDITIONS LIMITS MIN MAX 890 915 13 35 -30 4 2.0 No parasitic oscillation No degradation or destroy UNIT MHz W % dBc micro sec - VDD=12.5V, VGG=4V, Pin=2mW VDD=12.5V, Pin=2mW Po=13W (VGG adjust) Po=13W(VGG adjust), VGG: ON/OFF Vdd=12.5V, Pin=2mW STABILITY ZG=50 ohms, VDD=10-16V, Pin=1-4mW, Po=0.1-20W (VGG Control), LOAD VSWR < 4:1 LOAD VSWR TOLERANCE VDD=15.2V,Pin=2mW,Po=13W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .