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MGF1601B-01 - High-power GaAs FET

General Description

The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

Key Features

  • High linear power gain Glp=8.0dB @f=8GHz.
  • High P1dB P1dB=21.8dBm(TYP. ) @f=8GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.