MGF1601B-01
MGF1601B-01 is manufactured by Mitsubishi Electric.
< High-power GaAs FET (small signal gain stage) >
S to X BAND / 0.15W non
- matched
DESCRIPTION
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
Features
- High linear power gain Glp=8.0dB @f=8GHz
- High P1dB P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
- S to X Band medium-power amplifiers and oscillators
QUALITY
- GG
REMENDED BIAS CONDITION
- VDS=6V,Id=100mA Refer to Bias...
