MGF1801B
DESCRIPTION
The MGF1801B, medium-power Ga As FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable
OUTLINE DRAWING
4MIN.
Unit:millimeters
4MIN.
0.5±0.15
FEATURES
- High output power at 1d B gain pression P1d B=23d Bm(TYP.)
- High linear power gain GLP=9d B(TYP.)
- High reliability and stability @f=8GHz
0.5±0.15
@f=8GHz
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
- IG
REMENDED BIAS CONDITIONS
- VDS=6V
- ID=100m A
- Refer to Bias Procedure
1 GATE 2 SOURCE 3 DRAIN
GD-10
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol VGDO VGSO ID IGR IGF PT Tch Tstg
- 1:TC=25˚C
Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature
- 1
Ratings -8 -8 250...
